View IRG4PH40UD2_3882919.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

features

! "#$%& ' ( ) ' #$%&* +,-+. * * ') * ( # ) &*!/01 )( ) '#$%& )' ( +,-+. #$%&2 34 ') 5 (( 3 6.*7/870 www.irf.com 1 e g n-channel c
=
gds gate drain source to-247ac g d s d absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 40 a i c @ t c = 100c continuous collector current 20 i cm pulse collector current 160 i lm clamped inductive load current 160 i f @ tc = 100c diode continuous forward current 10 i fm diode maximum forward current 40 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 160 w p d @ t c = 100c maximum power dissipation 65 t j operating junction and -55 to +150 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw th erma l / m ec h an i ca l ch aracter i st i cs parameter min. t y p. max. units r jc junction-to-case- igbt ??? ??? 0.77 c/w r jc junction-to-case- diode ??? ??? 2.5 r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6 (0.21) ??? g (oz.) 10 lbf in (1.1n m)

2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250 a ? v (br)ces / ? t j temperature coeff. of breakdown volta g e ?0.63?v/c v ge = 0v, i c = 1ma (25c-150c) ? 1.72 2.1 v i c = 20a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.15 ? i c = 40a, v ge = 15v, t j = 125c ?1.7? i c = 20a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250 a ? v ge(th) / ? t j threshold voltage temp. coefficient ? -13 ? mv/ c v ce = v ge , i c = 250 a gfe forward transconductance 11 18 ? s v ce = 100v, i c = 20a ??250 v ge = 0v, v ce = 1200v i ces zero gate voltage collector current ? ? 2.0 a v ge = 0v, v ce = 10v, t j = 25c ? ? 2500 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 3.4 3.8 v i f = 10a, v ge = 0v ?3.33.7 i f = 10a, v ge = 0v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 110 130 i c = 20a q ge gate-to-emitter charge (turn-on) ? 18 24 nc v cc = 400v q gc gate-to-collector charge (turn-on) ? 36 53 v ge = 15v t d(on) turn-on delay time ? 23 ? i c = 20a, v cc = 600v t r rise time ? 27 ? ns v ge = 15v, r g = 10 ? t d(off) turn-off delay time ? 100 110 t j = 25c t f fall time ? 280 340 energy losses inclued "tail" e on turn-on switching loss ? 1440 ? i c = 20a, v cc = 600v e off turn-off switching loss ? 1410 ? j v ge = 15v, r g = 10 ? e tot total switching loss ? 2850 3740 t j = 25c t d(on) turn-on delay time ? 22 ? i c = 20a, v cc = 600v t r rise time ? 32 ? ns v ge = 15v, r g = 10 ? , l = 1.0mh t d(off) turn-off delay time ? 190 ? t j = 150c t f fall time ? 630 ? energy losses inclued "tail" e ts total switching loss ? 5360 ? j l e internal emitter inductance ? 13 ? nh measured 5mm froom package c ies input capacitance ? 2100 ? v ge = 0v c oes output capacitance ? 99 ? pf v cc = 30v c res reverse transfer capacitance ? 12 ? f = 1.0mhz t rr diode reverse recovery time ? 50 76 ns t j =25c, v cc = 200v, i f = 10a, di/dt = 200a/s ?72110 t j =125c, v cc = 200v, i f = 10a, di/dt = 200a/s i rr diode peak reverse recovery current ? 4.4 7.0 a t j =25c, v cc = 200v, i f = 10a, di/dt = 200a/s ?5.98.8 t j =125c, v cc = 200v, i f = 10a, di/dt = 200a/s q rr diode reverse recovery charge ? 130 200 nc t j =25c, v cc = 200v, i f = 10a, di/dt = 200a/s ? 250 380 t j =125c, v cc = 200v, i f = 10a, di/dt = 200a/s di (rec)m / dt diode peak rate of fall of recovery ? 210 ? a/s t j =25c, v cc = 200v, i f = 10a, di/dt = 200a/s during t b ?180? t j =125c, v cc = 200v, i f = 10a, di/dt = 200a/s

www.irf.com 3 ! 9:1;# < "# $# 0.1 1 10 100 f , frequency ( khz ) 0 5 10 15 20 25 30 35 40 45 50 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 125c tsink = 90c gate drive as specified power dissipation = 35w 60% of rated voltage i ideal diodes square wave: 1 10 100 1000 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 1 10 100 1000 4681012 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 10v 5s pulse width cc

4 www.irf.com %&''($$ #'')
('* ) ' %&'' ' 0 10 20 30 40 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge a 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a i = 40a i = 20a i = 10a t , junction temperature (c) j c c c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c

www.irf.com 5 ('* +#* +('* ,-#*+ . ,-#* ) ' 0 20 40 60 80 100 120 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v cc = 400v i c = 20a 0 10 20 30 40 50 r g , gate resistance ( ? ) 2500 2750 3000 3250 3500 t o t a l s w i c h i n g l o s s e s ( m j ) v ce = 600v v ge = 15v t j = 25c i c = 20a 1 10 v ce , collector-toemitter-voltage(v) 0 500 1000 1500 2000 2500 3000 3500 4000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc -55 -5 45 95 145 t j , juntion temperature (c) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 10 ? v ge = 15v i c = 40a i c = 20a i c = 10a

6 www.irf.com "$$," %&'' -*/ - ,-#* (' 0 10 20 30 40 i c , collecto-to-emitter (a) 0 1000 2000 3000 4000 5000 6000 7000 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 10 ? t j = 150c v ce = 600v v ge = 15v 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j

www.irf.com 7 .. 0
. 0 ,#* 0
0 0

8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce & 1 4 # + +

= #

t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = & >' 1 3?@. +
vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt & >' 1 3?@ . +
& >' 1 3?@ . + = #

www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit
figure 18e. macro waveforms for figure 18a's test circuit

10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. to-247ac package is not recommended for surface mount application. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/06 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

. 9 <

!" #$%&

##%&' () *+,-,.(( / ) #

%
&0&1
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRG4PH40UD2

	To Download IRG4PH40UD2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .